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APT8020JFLL
800V
33A 0.220
S G D S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
2 T-
27
"UL Recognized"
ISOTOP fi
file # E145592
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT8020JFLL UNIT Volts Amps
800 33 132 30 40 520 4.16 -55 to 150 300 33 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.220 250 1000 100 3 5
(VGS = 10V, ID = 16.5A)
Ohms A nA Volts
5-2006 050-7090 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8020JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 33A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 33A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 33A, RG = 5 ID = 33A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5200 1000 190 195 27 130 12 14 39 10 760 715 1250 780
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
33 132 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -33A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -33A, di/dt = 100A/s) Reverse Recovery Charge (IS = -33A, di/dt = 100A/s) Peak Recovery Current (IS = -33A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
320 650 1.4 5.9 10.8 18.9
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 5.51mH, RG = 25, Peak IL = 33A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID33A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
5-2006
050-7090 Rev C
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
100 VGS =15 &10 V 7V 60 6.5V 40 8V
APT8020JFLL
ID, DRAIN CURRENT (AMPERES)
80
TJ ( C)
0.0528 Dissipated Power (Watts) 0.0203 0.173 0.490 0.0651
TC ( C)
0.123
ZEXT
6V 20 5.5V 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 100 80 60 TJ = +125C 40 20 0 TJ = +25C TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 16.5A
D
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 16.5A = 10V
V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C)
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C)
050-7090 Rev C
5-2006
132 100
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT8020JFLL
10,000 Ciss 100S
C, CAPACITANCE (pF)
50
10 1mS TC =+25C TJ =+150C SINGLE PULSE
1,000
Coss
10mS 100
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 33A
200 100 TJ =+150C TJ =+25C 10
12 VDS=160V 8
VDS=400V
VDS=640V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 180 160 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
= 533V
R
= 5
80
V
DD G
T = 125C
J
L = 100H
td(on) and td(off) (ns)
140 120 100 80 60 40 20 0 10
= 533V
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
60
tf
40 tr
td(on)
20
ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
30
40
50
60
2500
V
= 533V
40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
V I
DD
0 10
20
30
= 533V
R
= 5
D J
= 38A
EON includes diode reverse recovery.
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
T = 125C
J
L = 100H
4000
T = 125C L = 100H E ON includes diode reverse recovery.
Eoff
1500 Eon 1000 Eoff
3000 Eon 2000
5-2006
500
1000
050-7090 Rev C
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
0 20 30 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
Typical Performance Curves
APT8020JFLL
10%
Gate Voltage TJ125C
90% Gate Voltage
TJ125C
td(on) tr
90% 5% 10% Switching Energy 5% Drain Voltage Drain Current
td(off)
90% Drain Voltage
tf
10% 0 Drain Current Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7090 Rev C
5-2006
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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